Jan 25, 2012
Driver amplifiersFour high-linearity driver amplifiers are InGaP/GaAs HBT semiconductor devices deliver high performance across a broad range of frequencies. The TQP7M9101, TQP7M9102, TQP7M9103 and TQP7M9104 are targeted for use in 3G/4G wireless infrastructure, general purpose wireless, and aerospace & defense systems where high linearity, medium power, and high efficiency are required. This rare combination of high performance makes these devices excellent driver amplifier candidates for current and next-generation RF transceiver applications.
These RF solutions incorporate on-chip features that differentiate them from other similar products in the market. Each of these amplifiers integrates on-chip DC over-voltage and RF overdrive protection. This feature protects the amplifiers from electrical DC voltage surges and high RF input power levels that may occur in a system. In addition, specially designed on-chip ESD protection allows the amplifiers to have very robust Class 2 (TQP7M9103, TQP7M9102, and TQP7M9103) and Class 1C (TQP7M9104) HBM ESD ratings.
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