15 February 2001
Polycrystalline silicon carbide (poly-SiC) has been surface micromachined using two methods. One takes the polysilicon as the sacrificial layer using potassium hydroxide, or KOH, as a release etchant. Another incorporates the SiO2 as a sacrificial layer using hydrogen fluoride, or HF, as a release etchant.
A single-mask surface micromachining process using the underlying polysilicon film as the sacrificial layer has been used to fabricate poly-SiC devices, as shown in this process flow.